Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs16mOhm @ 4A, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1.74 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-ECH
Package / Case8-SMD, Flat Lead

RELATED PRODUCT

IPS060N03LGAKMA1
MOSFET N-CH 30V 50A TO251-3
FQNL2N50BBU
MOSFET N-CH 500V 350MA TO92-3
NTD24N06L-001
MOSFET N-CH 60V 24A IPAK
NTD4810N-35G
MOSFET N-CH 30V 9A/54A IPAK
IRFL014NPBF
MOSFET N-CH 55V 1.9A SOT223
BSP615S2L
MOSFET N-CH 55V 2.8A SOT223-4
SPU21N05L
N-CHANNEL POWER MOSFET
NTHS4111PT1G
MOSFET P-CH 30V 3.3A CHIPFET
SFP9Z24
MOSFET P-CH 60V 9.7A TO220-3