SeriesOptiMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds330 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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