Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.8 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds981 pF @ 100 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251 (IPAK)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

SIHB15N60E-GE3
MOSFET N-CH 600V 15A D2PAK
STP80NF10FP
MOSFET N-CH 100V 38A TO220FP
STP26N60DM6
MOSFET N-CH 600V 18A TO220
STF14NM50N
MOSFET N-CH 500V 12A TO220FP
SIHA15N65E-GE3
MOSFET N-CHANNEL 650V 15A TO220
IPP65R190E6XKSA1
MOSFET N-CH 650V 20.2A TO220-3
SIHA25N50E-E3
MOSFET N-CH 500V 26A TO220
FCPF11N60NT
MOSFET N-CH 600V 10.8A TO220F
SIHP25N50E-GE3
MOSFET N-CH 500V 26A TO220AB