SeriesE
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2460 pF @ 100 V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

IPP65R190E6XKSA1
MOSFET N-CH 650V 20.2A TO220-3
SIHA25N50E-E3
MOSFET N-CH 500V 26A TO220
FCPF11N60NT
MOSFET N-CH 600V 10.8A TO220F
SIHP25N50E-GE3
MOSFET N-CH 500V 26A TO220AB
SIHP23N60E-GE3
MOSFET N-CH 600V 23A TO220AB
PSMN4R8-100PSEQ
MOSFET N-CH 100V 120A TO220AB
SIHP180N60E-GE3
MOSFET N-CH 600V 19A TO220AB
IPT60R102G7XTMA1
MOSFET N-CH 650V 23A 8HSOF
SIHA180N60E-GE3
MOSFET N-CH 600V 19A TO220