SeriesCoolMOS™ P7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)700 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs13.1 nC @ 400 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds424 pF @ 400 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

SI4455DY-T1-E3
MOSFET P-CH 150V 2.8A 8SO
IRFR9014PBF
MOSFET P-CH 60V 5.1A DPAK
SQM40081EL_GE3
MOSFET P-CH 40V 50A TO263
SI4842BDY-T1-GE3
MOSFET N-CH 30V 28A 8SO
IRFR110PBF
MOSFET N-CH 100V 4.3A DPAK
PSMN8R0-40PS,127
MOSFET N-CH 40V 77A TO220AB
PHB191NQ06LT,118
MOSFET N-CH 55V 75A D2PAK
BSB013NE2LXIXUMA1
MOSFET N-CH 25V 36A/163A 2WDSON
PSMN015-60PS,127
MOSFET N-CH 60V 50A TO220AB