Series-
PackageTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

RELATED PRODUCT

SQM40081EL_GE3
MOSFET P-CH 40V 50A TO263
SI4842BDY-T1-GE3
MOSFET N-CH 30V 28A 8SO
IRFR110PBF
MOSFET N-CH 100V 4.3A DPAK
PSMN8R0-40PS,127
MOSFET N-CH 40V 77A TO220AB
PHB191NQ06LT,118
MOSFET N-CH 55V 75A D2PAK
BSB013NE2LXIXUMA1
MOSFET N-CH 25V 36A/163A 2WDSON
PSMN015-60PS,127
MOSFET N-CH 60V 50A TO220AB
SIR140DP-T1-RE3
MOSFET N-CH 25V 71.9A/100A PPAK
IRFU110PBF
MOSFET N-CH 100V 4.3A TO251AA