SeriesHiPerFET™, PolarP2™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 70A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs185 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

RELATED PRODUCT

TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
IXFX120N65X2
MOSFET N-CH 650V 120A PLUS247-3
C3M0032120K
SICFET N-CH 1200V 63A TO247-4L
SCT30N120
SICFET N-CH 1200V 40A HIP247
IXFN180N15P
MOSFET N-CH 150V 150A SOT-227B
IPZ65R019C7XKSA1
MOSFET N-CH 650V 75A TO247-4
IXFN64N50P
MOSFET N-CH 500V 61A SOT227B
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3