SeriesPolarHV™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds8700 pF @ 25 V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

RELATED PRODUCT

TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
IXFK360N15T2
MOSFET N-CH 150V 360A TO264AA
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
IXFN420N10T
MOSFET N-CH 100V 420A SOT227B
C3M0030090K
SICFET N-CH 900V 63A TO247-4
IXFB150N65X2
MOSFET N-CH 650V 150A PLUS264
IXTN170P10P
MOSFET P-CH 100V 170A SOT227B