SeriesCoolMOS™ C7
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs107 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4340 pF @ 400 V
FET Feature-
Power Dissipation (Max)227W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

RELATED PRODUCT

IXFH15N100Q3
MOSFET N-CH 1000V 15A TO247AD
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
UF3C120080K4S
SICFET N-CH 1200V 33A TO247-4
STW65N80K5
MOSFET N-CH 800V 46A TO247
STW40N95K5
MOSFET N-CH 950V 38A TO247
SCTW35N65G2V
SICFET N-CH 650V 45A HIP247
IXTH02N250
MOSFET N-CH 2500V 200MA TO247
IXFR140N20P
MOSFET N-CH 200V 90A ISOPLUS247
NVH4L040N120SC1
TRANS SJT N-CH 1200V 58A TO247-4
NVHL040N120SC1
TRANS SJT N-CH 1200V 60A TO247-3