Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs43 nC @ 12 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
FET Feature-
Power Dissipation (Max)254.2W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

RELATED PRODUCT

STW65N80K5
MOSFET N-CH 800V 46A TO247
STW40N95K5
MOSFET N-CH 950V 38A TO247
SCTW35N65G2V
SICFET N-CH 650V 45A HIP247
IXTH02N250
MOSFET N-CH 2500V 200MA TO247
IXFR140N20P
MOSFET N-CH 200V 90A ISOPLUS247
NVH4L040N120SC1
TRANS SJT N-CH 1200V 58A TO247-4
NVHL040N120SC1
TRANS SJT N-CH 1200V 60A TO247-3
IXFT50N85XHV
MOSFET N-CH 850V 50A TO268
SCT2160KEC
SICFET N-CH 1200V 22A TO247
C2M0080120D
SICFET N-CH 1200V 36A TO247-3