Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2500 V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1660 pF @ 25 V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

RELATED PRODUCT

STY145N65M5
MOSFET N-CH 650V 138A MAX247
SCT3030ALHRC11
SICFET N-CH 650V 70A TO247N
UF3SC120016K4S
SICFET N-CH 1200V 107A TO247-4
IXTK5N250
MOSFET N-CH 2500V 5A TO264
UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4
UF3SC120009K4S
SICFET N-CH 1200V 120A TO247-4
G2R120MT33J
SIC MOSFET N-CH TO263-7
SCT3022KLHRC11
SICFET N-CH 1200V 95A TO247N