Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C107A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs21mOhm @ 50A, 12V
Vgs(th) (Max) @ Id6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs218 nC @ 15 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7824 pF @ 800 V
FET Feature-
Power Dissipation (Max)517W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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