SeriesPolarP™
PackageTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs85mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs103 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V
FET Feature-
Power Dissipation (Max)462W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

RELATED PRODUCT

IXTH90P10P
MOSFET P-CH 100V 90A TO247
IRFP26N60LPBF
MOSFET N-CH 600V 26A TO247-3
IPP60R022S7XKSA1
MOSFET N-CH 600V 23A TO220-3
IXTT20P50P
MOSFET P-CH 500V 20A TO268
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
2N6661
MOSFET N-CH 90V 350MA TO39
2N6660
MOSFET N-CH 60V 410MA TO39
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
IXFH320N10T2
MOSFET N-CH 100V 320A TO247AD