SeriesHiPerFET™, TrenchT2™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs430 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds26000 pF @ 25 V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

RELATED PRODUCT

IXTK180N15P
MOSFET N-CH 150V 180A TO264
IXFH80N65X2
MOSFET N-CH 650V 80A TO247
IPW65R041CFDFKSA1
MOSFET N-CH 650V 68.5A TO247-3
STW21N150K5
MOSFET N-CH 1500V 14A TO247
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3
STW88N65M5
MOSFET N-CH 650V 84A TO247-3
UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
IPW60R041C6FKSA1
MOSFET N-CH 600V 77.5A TO247-3