SeriesTrenchMV™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9400 pF @ 25 V
FET Feature-
Power Dissipation (Max)550W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

RELATED PRODUCT

STW4N150
MOSFET N-CH 1500V 4A TO247-3
STH12N120K5-2
MOSFET N-CH 1200V 12A H2PAK-2
IPW60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO247-3
IPP200N25N3GXKSA1
MOSFET N-CH 250V 64A TO220-3
IXFP80N25X3
MOSFET N-CH 250V 80A TO220AB
2SK1835-E
MOSFET N-CH 1500V 4A TO3P
IXFH6N100F
MOSFET N-CH 1000V 6A TO247
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
IPP110N20NAAKSA1
MOSFET N-CH 200V 88A TO220-3
IXFH60N50P3
MOSFET N-CH 500V 60A TO247AD