SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs83 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5430 pF @ 25 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB (IXFP)
Package / CaseTO-220-3

RELATED PRODUCT

2SK1835-E
MOSFET N-CH 1500V 4A TO3P
IXFH6N100F
MOSFET N-CH 1000V 6A TO247
UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3
IPP110N20NAAKSA1
MOSFET N-CH 200V 88A TO220-3
IXFH60N50P3
MOSFET N-CH 500V 60A TO247AD
IRF200P222
MOSFET N-CH 200V 182A TO247AC
IRF300P226
MOSFET N-CH 300V 100A TO247AC
STB57N65M5
MOSFET N-CH 650V 42A D2PAK
IPW60R037P7XKSA1
MOSFET N-CH 650V 76A TO247-3
IXFH50N20
MOSFET N-CH 200V 50A TO247AD