SeriesPolarP™
PackageTube
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2845 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

RELATED PRODUCT

IPA60R099C6XKSA1
MOSFET N-CH 600V 37.9A TO220-FP
IPP60R099C6XKSA1
MOSFET N-CH 600V 37.9A TO220-3
IRFP4868PBF
MOSFET N-CH 300V 70A TO247AC
IPT60R050G7XTMA1
MOSFET N-CH 650V 44A 8HSOF
IXTA6N50D2
MOSFET N-CH 500V 6A TO263
IPP110N20N3GXKSA1
MOSFET N-CH 200V 88A TO220-3
IPP051N15N5AKSA1
MOSFET N-CH 150V 120A TO220-3
IXTP3N120
MOSFET N-CH 1200V 3A TO220AB
IXTH200N10T
MOSFET N-CH 100V 200A TO247
STW4N150
MOSFET N-CH 1500V 4A TO247-3