| Series | - |
| Package | Bulk |
| Part Status | Active |
| FET Type | 4 N-Channel (Three Level Inverter) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.2V @ 2mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 1000V |
| Power - Max | 250W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |
