Series-
PackageBulk
Part StatusActive
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C147A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id2.4V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs322nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds5600pF @ 1000V
Power - Max625W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6-P