SeriesCoolSiC™
PackageTray
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C250A (Tc)
Rds On (Max) @ Id, Vgs5.81mOhm @ 250A, 15V
Vgs(th) (Max) @ Id5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds14700pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-62MM

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