Series-
PackageTube
Part StatusActive
FET Type6 N-Channel (3-Phase Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C171A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds6040pF @ 1000V
Power - Max728W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageSP6-P

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