SeriesCoolSiC™+
PackageTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C100A
Rds On (Max) @ Id, Vgs11mOhm @ 100A, 15V
Vgs(th) (Max) @ Id5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds7950pF @ 800V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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