SeriesCoolSiC™+
PackageTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C25A (Tj)
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 800V
Power - Max20mW (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1BM-2

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