Series-
PackageBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C20A, 50A
Rds On (Max) @ Id, Vgs7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1650pF @ 10V
Power - Max15W, 35W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-WPAK-D

RELATED PRODUCT

NTMFD4C88NT1G
POWER FIELD-EFFECT TRANSISTOR
2SK2596BXTL-E
ULTRA HIGH FREQ BAND, N-CHANNEL
SPA15N65C3
POWER FIELD-EFFECT TRANSISTOR, 1
IRFF9211
AUTOMOTIVE HEXFET P-CHANNEL
IRFIRL60B216
HEXFET POWER MOSFET
HIP2060ASE
HIP2060 - 60V, 10A HALF BRIDGE
CSD87355Q5DT
MOSFET 2N-CH 30V 45A 8LSON
FDS8947A
P-CHANNEL POWER MOSFET
IPI100N12S305AKSA1
OPTLMOS N-CHANNEL POWER MOSFET