SeriesHEXFET®
PackageBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C86A (Tc), 303A (Tc)
Rds On (Max) @ Id, Vgs2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Vgs(th) (Max) @ Id2.1V @ 35µA, 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs20nC, 53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1735pF @ 13V, 4765pF @ 13V
Power - Max156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case32-PowerVFQFN
Supplier Device Package32-PQFN (6x6)

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