IS61LPS51236B-200B3LI

Series-
PackageTray
Part StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size18Mb (512K x 36)
Memory InterfaceParallel
Clock Frequency200 MHz
Write Cycle Time - Word, Page-
Access Time3 ns
Voltage - Supply3.135V ~ 3.465V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-TBGA
Supplier Device Package165-TFBGA (13x15)

RELATED PRODUCT

AS4C64M16D1A-6TCN
IC DRAM 1GBIT PARALLEL 66TSOP II
DS1230W-150+
IC NVSRAM 256KBIT PAR 28EDIP
DS1230Y-85+
IC NVSRAM 256KBIT PAR 28EDIP
DS1230YP-70IND+
IC NVSRAM 256KBIT PAR 34PWRCAP
CY14B104NA-ZSP45XI
IC NVSRAM 4MBIT PAR 54TSOP II
CY7C1361C-100AXE
IC SRAM 9MBIT PARALLEL 100TQFP
DS1245W-100+
IC NVSRAM 1MBIT PARALLEL 32EDIP
CY7C1382KV33-200AXC
IC SRAM 18MBIT PARALLEL 100TQFP
DS1245AB-70IND+
IC NVSRAM 1MBIT PARALLEL 32EDIP
CY7C1370KV33-167AXC
IC SRAM 18MBIT PARALLEL 100TQFP