S34MS02G100BHI000

SeriesMS-1
PackageBulk
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size2Gb (256M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page45ns
Access Time45 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-VFBGA
Supplier Device Package63-BGA (11x9)

RELATED PRODUCT

S29GL064N90TFI060
IC FLASH 64MBIT PARALLEL 48TSOP
CY62137FV30LL-55ZSXE
IC SRAM 2MBIT PARALLEL 44TSOP II
CY62136FV30LL-55ZSXE
IC SRAM 2MBIT PARALLEL 44TSOP II
S29GL512T11FHIV10
PARALLEL NOR MIRRORBIT FLASH, 51
S29GL512T11FAIV10
IC FLASH 512MBIT PARALLEL 64FBGA
CY15B256Q-SXA
IC FRAM 256KBIT SPI 40MHZ 8SOIC
M29DW128G70NF6E
IC FLASH 128MBIT PARALLEL 56TSOP
S29GL512P10TFCR10
IC FLASH 512MBIT PARALLEL 56TSOP
S29GL256P90TFIR23
IC FLASH 256MBIT PARALLEL 56TSOP