MT29F16G08ABCCBH1-10ITZ:C

Series-
PackageBulk
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size16Gb (2G x 8)
Memory InterfaceParallel
Clock Frequency100 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case100-VBGA
Supplier Device Package100-VBGA (12x18)

RELATED PRODUCT

CY7C1313V18-167BZC
QDR SRAM, 1MX18, 0.5NS
CY14B104L-BA25XC
IC NVSRAM 4MBIT PARALLEL 48FBGA
CY14B104L-ZS25XC
IC NVSRAM 4MBIT PAR 44TSOP II
CY7C1380DV33-200BZI
IC SRAM 18MBIT PARALLEL 165FBGA
HN27C4001G10
UV EPROM, 512KX8, 100NS
HN58C1001RFPI15E
PARALLEL EEPROM 128KWORD X 8-BIT
CY7C261-35JC
OTP ROM, 8KX8, 35NS PQCC28
0418A1ACLAA-42
4MBIT (256K X 18) SRAM