TH58NYG3S0HBAI4

Series-
PackageTray
Part StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size8Gb (1G x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page25ns
Access Time25 ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-VFBGA
Supplier Device Package63-TFBGA (9x11)

RELATED PRODUCT

S25FL512SAGMFVR11
IC FLASH 512MBIT SPI/QUAD 16SOIC
S25FL512SAGMFAG10
IC FLASH 512MBIT SPI/QUAD 16SOIC
CY62157EV18LL-55BVXI
IC SRAM 8MBIT PARALLEL 48VFBGA
RMLV1616AGBG-5S2#AC0
IC SRAM 16MBIT PARALLEL 48TFBGA
CY14B101J2-SXI
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC