Series | - |
Package | Tray |
Part Status | Active |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 1230 V |
Current - Average Rectified (Io) | 8A |
Voltage - Forward (Vf) (Max) @ If | 1.723 V @ 20 A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 200 µA @ 1230 V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Operating Temperature - Junction | 175°C (Max) |
Rm 1099,Block A,BaoHua Building,
HuaQiang North Rd,Futian Dist, SZ, China.
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