SeriesGen-III
PackageTube
Part StatusActive
Diode TypeSilicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)20A (DC)
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr120 µA @ 650 V
Capacitance @ Vr, F654pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220-2
Operating Temperature - Junction-55°C ~ 175°C

RELATED PRODUCT

RHRU150100
150A, 1000V HYPERFAST DIODE
WNSC101200Q
SILICON CARBIDE POWER DIODE
WNSC101200WQ
SILICON CARBIDE POWER DIODE
NTE6092
R-SCHOTTKY 40A 60V DUAL
RURU10060
100A, 600V ULTRAFAST DIODE
NTE5884
R-600V 25A DO4 KK
UJ3D06520KSD
650V 20A SIC SCHOTTKY DIODE G3,
NTE518
R-SI 10KV 25MA
GP3D015A120A
SIC SCHOTTKY DIODE 1200V TO220