Series-
PackageTape & Box (TB)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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