Series-
PackageBag
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs143mOhm @ 15A, 15V
Vgs(th) (Max) @ Id7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs74 nC @ 15 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V
FET Feature-
Power Dissipation (Max)93W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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