Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds138 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

RELATED PRODUCT

TSM8N70CI C0
MOSFET N-CH 700V 8A ITO220AB
CZDM1003N BK
MOSFET N-CH 100V 3A SOT-223
STL12N10F7
MOSFET N-CH 100V 44A POWERFLAT
SIA430DJ-T4-GE3
MOSFET N-CH 20V 12A/12A PPAK
SIA444DJT-T4-GE3
MOSFET N-CH 30V 11A/12A PPAK
SIA462DJ-T4-GE3
MOSFET N-CH 30V 12A/12A PPAK
IRFC430
MOSFET N-CH 500V TO PKG
AO4407
MOSFET P-CH 30V 12A 8SOIC
AO3438_001
MOSFET N-CH 20V 3A SOT23-3