Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)5.5 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)3.5V, 4.5V
Rds On (Max) @ Id, Vgs2.4mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 3.5 V
Vgs (Max)±5.5V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 5.5 V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WLCSP (1.47x1.47)
Package / Case6-SMD, No Lead