SeriesPOWER MOS V®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs485 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7800 pF @ 25 V
FET Feature-
Power Dissipation (Max)450W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package / CaseSOT-227-4, miniBLOC

RELATED PRODUCT

SI4010DY-T1-GE3
MOSFET N-CHANNEL 30V 31.3A 8SO
AOT10N60L
MOSFET N-CHANNEL 600V 10A TO220
AOD4T60
MOSFET N-CHANNEL 600V 4A TO252
AOT10T60P
MOSFET N-CHANNEL 600V 10A TO220
AOT11C60
MOSFET N-CHANNEL 600V 11A TO220