SeriesCoolMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790 pF @ 25 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

SPP20N60CFDHKSA1
MOSFET N-CH 650V 20.7A TO220-3
DMJ70H1D3SH3
MOSFET N-CH 700V 4.6A TO251
DMJ70H1D3SI3
MOSFET N-CH 700V 4.6A TO251
DMN63D1L-7
MOSFET N-CH 60V 380MA SOT23
64-4123PBF
MOSFET N-CH 100V DPAK
AUIRF7739L2
MOSFET N-CH 40V 46A DIRECTFET
AUXTLR3110Z
MOSFET N-CH 100V DPAK
AUXFN8403TR
MOSFET N-CH 40V 95A 8PQFN
IRFH7885TRPBF
MOSFET N-CH 80V 22A 8PQFN
IRFH7882TRPBF
MOSFET N-CH 80V 26A 8PQFN