SeriesHEXFET®, StrongIRFET™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 48A, 10V
Vgs(th) (Max) @ Id3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3199 pF @ 25 V
FET Feature-
Power Dissipation (Max)40.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB Full-Pak
Package / CaseTO-220-3 Full Pack

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