Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

RELATED PRODUCT

R6024ENZ1C9
MOSFET N-CH 600V 24A TO247
R6024ENZC8
MOSFET N-CH 600V 24A TO3PF
R6025ANZC8
MOSFET N-CH 600V 25A TO3PF
R6025FNZ1C9
MOSFET N-CH 600V 25A TO247
R6030ENZC8
MOSFET N-CH 600V 30A TO3PF
R6035ENZ1C9
MOSFET N-CH 600V 35A TO247
R6035ENZC8
MOSFET N-CH 600V 35A TO3PF
STL9P2UH7
MOSFET P-CH 20V 9A POWERFLAT
STS9P2UH7
MOSFET P-CH 20V 9A 8SO
STT3P2UH7
MOSFET P-CH 20V 3A SOT23-6