Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C46A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs81mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

RELATED PRODUCT

RUE002N05TL
MOSFET N-CH 50V 200MA EMT3
BUK7Y12-80EX
MOSFET N-CH 80V LFPAK56 PWR-SO8
BUK7Y3R0-40EX
MOSFET N-CH 40V LFPAK56 PWR-SO8
BUK9Y12-80E,115
MOSFET N-CH 80V LFPAK56 PWR-SO8
PH7630DLX
MOSFET N-CH 30V LFPAK
BUK762R0-40E,118
MOSFET N-CH 40V 120A D2PAK
AOI1N60
MOSFET N-CH 600V 1.3A TO251A
AOT462L
MOSFET N-CH 60V 7A/35A TO220
2SK1339-E
MOSFET N-CH 900V 3A TO3P