SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9370 pF @ 50 V
FET Feature-
Power Dissipation (Max)370W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

AUIRFS3306
MOSFET N-CH 60V 120A D2PAK
AUIRLL014N
MOSFET N-CH 55V 2A SOT-223
AUIRLL024N
MOSFET N-CH 55V 3.1A SOT-223
AUIRLR3915
MOSFET N-CH 55V 30A DPAK
AUIRLS3114Z
MOSFET N-CH 40V 56A DPAK
AUIRLSL3036
MOSFET N-CH 60V 195A TO262
AUIRLZ44ZS
MOSFET N-CH 55V 51A SMD DPAK
IRF1902GPBF
MOSFET N-CH 20V 4.2A 8SO
IRF3710ZGPBF
MOSFET N-CH 100V 59A TO220AB
IRF4104GPBF
MOSFET N CH 40V 75A TO220AB