SeriesHEXFET®
PackageTube
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13.9mOhm @ 37A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3180 pF @ 50 V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

IRFI4510GPBF
MOSFET N CH 100V 35A TO220
IRF7946TR1PBF
MOSFET N CH 40V 90A DIRECTFET MX
AUIRF3315STRL
MOSFET N-CH 150V 21A D2PAK
AUIRF7207QTR
MOSFET P-CH 20V 5.4A 8SO
AUIRF7478QTR
MOSFET N-CH 60V 7A 8SO
AUIRFS3806TRL
MOSFET N-CH 60V 43A D2PAK
AUIRFZ24NSTRR
MOSFET N-CH 55V 17A DPAK
AUIRLR3915TRL
MOSFET N-CH 55V 30A DPAK
AUIRLZ44ZSTRL
MOSFET N-CH 55V 51A SMD DPAK
IRF1902GTRPBF
MOSFET N-CH 20V 4.2A 8SO