SeriesaMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds372 pF @ 100 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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