Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs51mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 20 V
FET Feature-
Power Dissipation (Max)1W (Ta), 23W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTP
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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