Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs816mOhm @ 12A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs260 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6696 pF @ 25 V
FET Feature-
Power Dissipation (Max)357W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

RELATED PRODUCT

APTM120SK15G
MOSFET N-CH 1200V 60A SP6
APTM120SK29TG
MOSFET N-CH 1200V 34A SP4
APTM120SK56T1G
MOSFET N-CH 1200V 18A SP1
APTM120SK68T1G
MOSFET N-CH 1200V 15A SP1
APTM120U10DAG
MOSFET N-CH 1200V 160A SP6
APTM120UM95FAG
MOSFET N-CH 1200V 103A SP6
APTM20DAM10TG
MOSFET N-CH 200V 175A SP4
APTM20SKM05G
MOSFET N-CH 200V 317A SP6
APTM20SKM10TG
MOSFET N-CH 200V 175A SP4
APTM20UM05SG
MOSFET N-CH 200V 317A MODULE