Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 72A, 10V
Vgs(th) (Max) @ Id3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs518 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14000 pF @ 25 V
FET Feature-
Power Dissipation (Max)416W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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