SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

RELATED PRODUCT

IRFR3303CPBF
MOSFET N-CH 30V 33A DPAK
IRFR5505CPBF
MOSFET P-CH 55V 18A DPAK
IRF7854PBF
MOSFET N-CH 80V 10A 8SO
IRF6215L-103PBF
MOSFET P-CH 150V 13A TO262
IRF7524D1PBF
MOSFET P-CH 20V 1.7A MICRO8
IRLR4343-701PBF
MOSFET N-CH 55V 26A IPAK
IRFR220NCPBF
MOSFET N-CH 200V 5A DPAK
IRL3803VSPBF
MOSFET N-CH 30V 140A D2PAK
IRF7494PBF
MOSFET N-CH 150V 5.1A 8SO
IRFU3706-701PBF
MOSFET N-CH 20V 75A IPAK