SeriesMDmesh™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 25 V
FET Feature-
Power Dissipation (Max)160W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

RELATED PRODUCT

STB130NS04ZBT4
MOSFET N-CH 33V 80A D2PAK
STB15NK50ZT4
MOSFET N-CH 500V 14A D2PAK
STB160NF3LLT4
MOSFET N-CH 30V 160A D2PAK
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
STB190NF04T4
MOSFET N-CH 40V 120A D2PAK
STB20NM60-1
MOSFET N-CH 600V 20A I2PAK
STB22NS25ZT4
MOSFET N-CH 250V 22A D2PAK
STB50NE10T4
MOSFET N-CH 100V 50A D2PAK
STB60NE06L-16T4
MOSFET N-CH 60V 60A D2PAK
STB60NH02LT4
MOSFET N-CH 24V 60A D2PAK