SeriesCoolMOS™ CE
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds84 pF @ 100 V
FET Feature-
Power Dissipation (Max)26W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

YJS4435A-F2-0000HF
P-CH MOSFET 30V 10A SOP-8
IPU50R2K0CEAKMA1
MOSFET N-CH 500V 2.4A TO251-3
BSS119L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3
YJS4407A-F2-0000HF
P-CH MOSFET 30V 12A SOP-8
BUK92150-55A,118
N-CHANNEL TRENCHMOS LOGIC LEVEL
PH6325L,115
MOSFET N-CH 25V 78.7A LFPAK56
IRFR120NTRRPBF
MOSFET N-CH 100V 9.4A DPAK
YJD20N06A-F1-0000HF
N-CH MOSFET 60V 20A TO-252
NTLUS4C16NTAG
MOSFET N-CH 30V 9.4A 6UDFN
BSZ165N04NSGATMA1
MOSFET N-CH 40V 8.9A/31A TSDSON