Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs396mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs305 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7868 pF @ 25 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

RELATED PRODUCT

IXFN80N50Q3
MOSFET N-CH 500V 63A SOT227B
MMIX1F44N100Q3
MOSFET N-CH 1000V 30A 24SMPD
IXTN120P20T
MOSFET P-CH 200V 106A SOT227B
APT32F120J
MOSFET N-CH 1200V 33A ISOTOP
IXFN26N100P
MOSFET N-CH 1000V 23A SOT-227B
IXFL32N120P
MOSFET N-CH 1200V 24A I5PAK
IXTN17N120L
MOSFET N-CH 1200V 15A SOT-227B
IXFN26N120P
MOSFET N-CH 1200V 23A SOT-227B
STE70NM60
MOSFET N-CH 600V 70A ISOTOP